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| Ordering number:EN4336 FC13 N-Channel Junction Silicon FET Low-Frequency General-Purpose Amp, Differential Amp, Analog Switch Applications Features * Composite type with 2 FETs contained in the CP package currently in use, improving the mounting efficiency greatly. * The FC13 is formed with two chips, being equivalent to the 2SK303, placed in one package. * Excellent in thermal equilibrium and pair capability and especially suited for differential amp. Package Dimensions unit:mm 2095A [FC13] Electrical Connection 1:Source1 2:Drain1 3:Gate2 4:Source2 5:Drain2 6:Gate1 SANYO:CP6 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD PT Tj Tstg 1unit Conditions Ratings 30 -30 10 10 200 300 150 -55 to +150 Unit V V mA mA mW mW C C Electrical Characteristics at Ta = 25C Parameter G-D Breakdown Voltage Gate-to-Source Leakage Current Cutoff Voltage G-S Voltage Drop Drain Current Drain Current Ratio Forward Transfer Admittance Forward Transfer Admittance Ratio Input Capacitance Reverse Transfer Capacitance Static Drain-to-Source On-State Resistance Ciss Crss RDS(on) | Yfs | Symbol V(BR)DGD IG=-10A, VDS=0 IGSS VGS=-20V, VDS=0 VGS(off) VGS IDSS VDS=10V, ID=1A VGS(small/large), VDS=10V, ID=1mA VDS=10V, VGS=0 VDS=10V, IDSS(small/large) VDS=10V, VGS=0, f=1kHz VDS=10V, | Yfs | (small/large) VDS=10V, VGS=0, f=1MHz VDS=10V, VGS=0, f=1MHz VDS=10mV, VGS=0 1.2* 0.9 3.0 0.9 5.0 0.9 250 pF pF 5.0 mS Conditions Ratings min -30 -1.0 -0.3 -0.9 -2.5 50 6.0* typ max Unit V nA V mV mA The specifications shown above are for each individual transistor. Note*:The FC13 is classified by FET1 IDSS as follows : 1.2 D 3.0 2.5 E 6.0 Marking:13 IDSS rank:D,E SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/53094TH (KOYO) X-7245 No.4336-1/3 FC13 No.4336-2/3 FC13 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.4336-3/3 |
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